 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DATA SHEET MOS FIELD EFFECT TRANSISTOR PA2710GR SWITCHING P-CHANNEL POWER MOS FET DESCRIPTION The PA2710GR is P-Channel MOS Field Effect Transistor designed for power management applications of notebook computers and Li-ion battery protection circuit. PACKAGE DRAWING (Unit: mm) 8 5 1, 2, 3 : Source 4 : Gate 5, 6, 7, 8 : Drain FEATURES * Low on-state resistance RDS(on)1 = 5.5 m MAX. (VGS = -10 V, ID = -7.5 A) RDS(on)2 = 9.0 m MAX. (VGS = -4.5 V, ID = -7.5 A) RDS(on)3 = 11 m MAX. (VGS = -4.0 V, ID = -7.5 A) 5 * Low Ciss: Ciss = 4300 pF TYP. * Small and surface mount package (Power SOP8) 1 4 5.37 MAX. +0.10 -0.05 6.0 0.3 4.4 0.8 1.8 MAX. 1.44 0.15 0.05 MIN. 0.5 0.2 0.10 ORDERING INFORMATION PART NUMBER PACKAGE Power SOP8 1.27 0.78 MAX. 0.40 +0.10 -0.05 0.12 M PA2710GR ABSOLUTE MAXIMUM RATINGS (TA = 25C, All terminals are connected.) Drain to Source Voltage (VGS = 0 V) Gate to Source Voltage (VDS = 0 V) Drain Current (DC) Drain Current (pulse) Note1 Note2 Note3 VDSS VGSS ID(DC) ID(pulse) PT1 PT2 Tch Tstg -30 m20 m15 m100 2 2 150 -55 to + 150 -15 22.5 V V A A W W C C A mJ Source Gate Body Diode Drain EQUIVALENT CIRCUIT Total Power Dissipation Total Power Dissipation Channel Temperature Storage Temperature Single Avalanche Current Single Avalanche Energy Notes 1. 2. 3. 4. Remark Note4 Note4 IAS EAS PW 10 s, Duty Cycle 1% 2 Mounted on ceramic substrate of 1200 mm x 2.2 mm Mounted on a glass epoxy board (1 inch x 1 inch x 0.8 mm), PW = 10 sec Starting Tch = 25C, VDD = -15 V, RG = 25 , L = 100 H, VGS = -20 0 V Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. Document No. G15978EJ3V0DS00 (3rd edition) Date Published February 2003 NS CP(K) Printed in Japan The mark 5 shows major revised points. 2002 PA2710GR 5 ELECTRICAL CHARACTERISTICS (TA = 25C, All terminals are connected.) CHARACTERISTICS Zero Gate Voltage Drain Current Gate Leakage Current Gate Cut-off Voltage Note Note Note SYMBOL IDSS IGSS VGS(off) | yfs | RDS(on)1 RDS(on)2 RDS(on)3 TEST CONDITIONS VDS = -30 V, VGS = 0 V VGS = m20 V, VDS = 0 V VDS = -10 V, ID = -1 mA VDS = -10 V, ID = -7.5 A VGS = -10 V, ID = -7.5 A VGS = -4.5 V, ID = -7.5 A VGS = -4.0 V, ID = -7.5 A VDS = -10 V VGS = 0 V f = 1 MHz VDD = -15 V, ID = -7.5 A VGS = -10 V RG = 10 MIN. TYP. MAX. UNIT -1 m100 -1.0 14 31 4.7 6.4 7.2 4300 1200 690 11 22 420 240 5.5 9.0 11 A nA V S m m m pF pF pF ns ns ns ns nC nC nC V ns nC -2.5 Forward Transfer Admittance Drain to Source On-state Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Total Gate Charge Gate to Source Charge Gate to Drain Charge Body Diode Forward Voltage Reverse Recovery Time Reverse Recovery Charge Ciss Coss Crss td(on) tr td(off) tf QG QGS QGD VF(S-D) trr Qrr VDD = -24 V VGS = -10 V ID = -15 A IF = 15 A, VGS = 0 V IF = 15 A, VGS = 0 V di/dt = 50 A/s 97 12 29 0.79 119 84 Note Pulsed PW350 s, Duty Cycle2% TEST CIRCUIT 1 AVALANCHE CAPABILITY D.U.T. RG = 25 PG VGS = -20 0 V - ID VDD BVDSS VDS VGS(-) 0 = 1 s Duty Cycle 1% VDS Wave Form TEST CIRCUIT 2 SWITCHING TIME L VDD PG. D.U.T. RL VGS(-) VGS Wave Form 50 RG 0 10% VGS 90% VDD VDS(-) 90% 90% 10% 10% IAS VDS 0 td(on) ton tr td(off) toff tf Starting Tch TEST CIRCUIT 3 GATE CHARGE D.U.T. IG = -2 mA 50 RL VDD PG. 2 Data Sheet G15978EJ3V0DS PA2710GR TYPICAL CHARACTERISTICS (TA = 25C) DERATING FACTOR OF FORWARD BIAS SAFE OPERATING AREA 120 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 2.8 Mounted on ceramic substrate of 2 1200 mm x 2.2 mm dT - Percentage of Rated Power - % PT - Total Power Dissipation - W 100 2.4 2 1.6 1.2 0.8 0.4 0 80 60 40 20 0 0 25 50 75 100 125 150 175 0 25 50 75 100 125 150 175 TA - Ambient Temperature - C TA - Ambient Temperature - C 5 FORWARD BIAS SAFE OPERATING AREA - 1000 PW=100 s ID(pulse) RDS(on) Limited 1 ms ID(DC) ID - Drain Current - A - 100 - 10 10 ms DC -1 TA = 25C Single Pulse 100 ms Power Dissipation Limited - 0.1 - 0.01 - 0.01 Mounted on ceramic substrate of 1200 mm2 x 2.2 mm - 0.1 -1 - 10 - 100 VDS - Drain to Source Voltage - V TRANSIENT THERMAL RESISTANCE vs. PULSE WIDTH 1000 rth(t) - Transient Thermal Resistance - C/W 100 Rth(ch-A) = 62.5C/W 10 1 0.1 Mounted on ceramic substrate of 2 1200 mm x 2.2 mm Single Pulse 0.01 100 1m 10 m 100 m 1 10 100 1000 PW - Pulse Width - s Data Sheet G15978EJ3V0DS 3 PA2710GR 5 - 120 - 100 - 80 - 60 - 40 - 20 0 0 - 0.4 - 0.8 - 1.2 VGS = -1 V -4.5 V Pulsed ID - Drain Current - A DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 5 FORWARD TRANSFER CHARACTERISTICS - 1000 Pulsed - 100 Tch = -55C 25C 75C 150C ID - Drain Current - A -4.0 V - 10 -1 - 0.1 VDS = -10 V - 0.01 0 -1 -2 -3 -4 -5 VDS - Drain to Source Voltage - V VGS - Gate to Source Voltage - V 5 - 2.5 GATE CUT-OFF VOLTAGE vs. CHANNEL TEMPERATURE | yfs | - Forward Transfer Admittance - S 5 FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 Tc h = - 55C 25C 75C 150C 10 VGS(off) - Gate Cut-off Voltage - V -2 - 1.5 -1 1 V D S = - 10 V P uls ed 0.1 - 0.1 - 0.5 P uls ed V D S = - 10 V 0 - 50 0 50 100 150 -1 - 10 - 100 Tch - Channel Temperature - C ID - Drain Current - A 5 DRAIN TO SOURCE ON-STATE RDS(on) - Drain to Source On-state Resistance - m 20 5 DRAIN TO SOURCE ON-STATE RESISTANCE vs. RDS(on) - Drain to Source On-state Resistance - m GATE TO SOURCE VOLTAGE 40 RESISTANCE vs. DRAIN CURRENT P uls ed 15 30 P uls ed ID = - 7.5 A 10 VGS = - 4.0V 20 5 - 4.5 V - 10 V 10 0 - 0.1 0 0 -5 - 10 - 15 - 20 -1 - 10 - 100 ID - Drain Current - A VGS - Gate to Source Voltage - V 4 Data Sheet G15978EJ3V0DS PA2710GR 5 DRAIN TO SOURCE ON-STATERESISTANCE vs. RDS(on) - Drain to Source On-state Resistance - m CHANNEL TEMPERATURE 15 5 CAPACITANCE vs. DRAIN TO SOURCE VOLTAGE 10 00 0 10 V GS = - 4.0 V - 4.5 V - 10 V Ciss, Coss, Crss - Capacitance - pF C is s 10 00 C os s C rs s 5 P uls ed ID = - 7.5 A 0 - 50 10 0 V GS = 0 V f = 1 M Hz 10 0.0 1 0 50 100 150 0.1 1 10 10 0 Tch - Channel Temperature - C VDS - Drain to Source Voltage - V 5 SWITCHING CHARACTERISTICS 1000 VDS - Drain to Source Voltage - V td(on), tr, td(off), tf - Switching Time - ns 5 DYNAMIC INPUT/OUTPUT CHARACTERISTICS - 30 - 15 VDD = -24 V -15 V -6 V VGS - Gate to Source Voltage - V td(off) tf 100 tr 10 VDD = -15 V VGS = -10 V RG = 10 1 - 0.1 -1 - 10 - 100 td(on) - 20 - 10 - 10 VGS VDS 0 0 20 40 60 80 -5 ID = -15 A 0 100 ID - Drain Current - A QG - Gate Charge - nC 5 SOURCE TO DRAIN DIODE FORWARD VOLTAGE 1000 P uls ed V G S = - 10 V 0V 5 10000 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 100 trr - Reverse Recovery Time - ns IF - Diode Forward Current - A 1000 10 1 100 0.1 VGS = 0 V di/dt = 50 A /s 10 0.1 1 10 100 0.01 0 0.2 0.4 0.6 0.8 1 1.2 VF(S-D) - Source to Drain Voltage - V IF - Diode Forward Current - A Data Sheet G15978EJ3V0DS 5 PA2710GR SINGLE AVALANCHE CURRENT vs. INDUCTIVE LOAD - 100 100 SINGLE AVALANCHE ENERGY DERATING FACTOR VDD = -15 V RG = 25 VGS = -20 0 V IAS -15 A IAS - Single Avalanche Current - A Energy Derating Factor - % IAS = -15 A - 10 EAS = 22.5 mJ 80 60 40 -1 VDD = -15 V VGS = -20 0 V RG = 25 Starting Tch = 25C 0.1 1 10 20 - 0.1 0.01 0 25 50 75 100 125 150 L - Inductive Load - mH Starting Tch - Starting Channel Temperature - C 6 Data Sheet G15978EJ3V0DS PA2710GR * The information in this document is current as of February, 2003. The information is subject to change without notice. For actual design-in, refer to the latest publications of NEC Electronics data sheets or data books, etc., for the most up-to-date specifications of NEC Electronics products. Not all products and/or types are available in every country. Please check with an NEC Electronics sales representative for availability and additional information. * No part of this document may be copied or reproduced in any form or by any means without the prior written consent of NEC Electronics. NEC Electronics assumes no responsibility for any errors that may appear in this document. * NEC Electronics does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from the use of NEC Electronics products listed in this document or any other liability arising from the use of such products. No license, express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of NEC Electronics or others. * Descriptions of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples. The incorporation of these circuits, software and information in the design of a customer's equipment shall be done under the full responsibility of the customer. NEC Electronics assumes no responsibility for any losses incurred by customers or third parties arising from the use of these circuits, software and information. * While NEC Electronics endeavors to enhance the quality, reliability and safety of NEC Electronics products, customers agree and acknowledge that the possibility of defects thereof cannot be eliminated entirely. To minimize risks of damage to property or injury (including death) to persons arising from defects in NEC Electronics products, customers must incorporate sufficient safety measures in their design, such as redundancy, fire-containment and anti-failure features. * NEC Electronics products are classified into the following three quality grades: "Standard", "Special" and "Specific". The "Specific" quality grade applies only to NEC Electronics products developed based on a customerdesignated "quality assurance program" for a specific application. The recommended applications of an NEC Electronics product depend on its quality grade, as indicated below. Customers must check the quality grade of each NEC Electronics product before using it in a particular application. "Standard": Computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots. "Special": Transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support). "Specific": Aircraft, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems and medical equipment for life support, etc. The quality grade of NEC Electronics products is "Standard" unless otherwise expressly specified in NEC Electronics data sheets or data books, etc. If customers wish to use NEC Electronics products in applications not intended by NEC Electronics, they must contact an NEC Electronics sales representative in advance to determine NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). M8E 02. 11-1 |
Price & Availability of UPA2710GR
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |